摘要
The ITO transparent conductive films were prepared on substrate of quartz glass by sol-gel method.The raw materials were nitrate indium,acetylacetone and the dopant of anhydrous chloride(SnCl4).The process from gel to crystalline film and the microstructure of the films were investigated by DTA-TG,XRD and SEM.The influence of preparation processes on the electricity performance of the films was also studied by four-probe apparatus.The results show that the crystallization process of ITO xerogel completes when the heat treatment temperature reaches 600 ℃.The ITO films possesses on vesicular structures accumulated by spherical particles,and both heat treatment temperature and cooling rate have important effects on the resistivity of ITO films.
The ITO transparent conductive films were prepared on substrate of quartzglass by sol-gel method. The raw materials were nitrate indium, acetylaeetone and the dopant ofanhydrous chloride (SnCl_4). The process from gel to crystalline film and the microstructure of thefilms were investigated by DTA-TG, XRD and SEM. The influence of preparation processes on theelectricity performance of the films was also studied by four-probe apparatus. The results show thatthe crystallization process of ITO xerogel completes when the heat treatment temperature reaches600 deg C. The ITO films possesses on vesicular structures accumulated by spherical particles, andboth heat treatment temperature and cooling rate have important effects on the resistivity of ITOfilms.
