感应耦合等离子刻蚀技术研究

Etching Technique of Inductive Couple Plasmas

依据感应耦合等离子体的刻蚀机理,对影响刻蚀的两个重要参数及先进的硅刻蚀技术进行了较深入的研究,并对影响刻蚀效果的参数进行了实验研究,刻蚀出了20μm深,2μm宽的谐振器结构,得到了最佳的工艺参数。

The etching mechanism of inductive couple plasmas, the two important parameters that affect the etching and the advanced silicon etching technique are studied. The parameters that affect the etching results are studied by experiment. Finally, the resonant structure with 20 μm deep and 2 μm width is gained, and the optimal technological parameters are obtained.