摘要
用束箔法研究了类硅铑离子的 3s2 3p2 3 P1,2 - 3s3p3 5S2 的禁戒跃迁谱线 .谱线识别从已知基态精细结构的分裂、基于分支比的强度比、相似的衰减特性、离子束能量下的谱线预期值方面着手 .识别后 ,通过对已知谱线的波长的等电子系列曲线插值或外推来获得用于较刻的谱线的波长 ,然后较刻出 3s2 3p2 3 P1,2 - 3s3p3 5S2
The 3s 23p 2 3P 1,2 -3s3p 3 5S 2 intercombination lines for Si like Rh were investigated using the technique of beam foil spectroscopy. The identifications suggested here were strengthened by the requirements on: the known fine structure splitting in the ground configuration, the intensity ratio based on branching ratios, the similar decay characteristics and the expected behaviors of the lines as a function of the ion beam energy. Two lines were identified as belonging to these transitions having, however, different wavelengths from what would be expected based on published iso electronic trends.
出处
《上海交通大学学报》
EI
CAS
CSCD
北大核心
2002年第9期1370-1372,共3页
Journal of Shanghai Jiaotong University
基金
国家自然科学基金资助项目 (10 0 740 45 )
上海市科委启明星计划项目 (0 0 QMH14 0 3 )
教育部资助优秀青年教师基金资助项目