摘要
以 Ba(CH3COO) 2 、Sr(CH3COO) 2 和 Ti(OC4 H9) 4为原料 ,以乙二醇甲醚为溶剂、冰乙酸为催化剂 ,应用溶胶 -凝胶技术在 Pt/ Mg O(10 0 )衬底上成功地制备了处延生长 Ba0 .6 5Sr0 .35Ti O3薄膜。 XRD和 SEM分析结果表明 ,该薄膜在 O2 气氛中 6 5 0°C热处理 1h后 ,其 (0 0 1)面是沿着 Pt(10 0 )和 Mg O(10 0 )面外延取向生长的 ,其平均晶粒大小为 4 8.5 nm。电性能测试结果表明 ,当测试频率为 10 k Hz时 ,其介电常数和损耗因子分别为 4 80和 0 .0 2。电滞回线测试结果表明 ,外延生长 Ba0 .6 5Sr0 .35Ti O3薄膜的剩余极化为 2 .8μC/ cm2 ,其矫顽场为 5 2 k V/ cm。
Epitaxial Ba 0 65 Sr 0 35 TiO 3 thin films have been successfully deposited on Pt/MgO(100) substrates by Sol Gel techniques.Barium acetate,strontium acetate and tetrabutyl tianate are used as raw materials.Glacial acetic acid is used as catalyst.Ethylene glycol monoethyl ether is used as a solvent.Crack free films of 350 nm thickness were fabricated using a multilayer spinning technique and calcination at 650 °C for 1 h.The XRD pattern demonstrates that (001) planes of BST films were mainly laid parallel to Pt(100) and MgO(100).The average grain size of the films was about 48.5 nm.The dielectric constant and dissipation factor for Ba 0 65 Sr 0 35 TiO 3 thin film at a frequency of 10 kHz were 480 and 0 02,respectively.The BST films exhibited a well saturated ferroelectric hysteresis loop with remanent polarization P r=2.8 μC/cm 2 and coercive field E c=52 kV/cm.
出处
《压电与声光》
CSCD
北大核心
2002年第5期395-397,共3页
Piezoelectrics & Acoustooptics
基金
武汉市晨光计划资助项目 (2 0 0 15 0 0 5 0 3 2)
