多晶硅微机械开关(英文)

Poly-Silicon Micromachined Switch

利用 L PCVD Si O2 和多晶硅作牺牲层和悬臂梁技术 ,解决了多晶硅应力释放问题以及微机械开关工艺与 IC工艺兼容技术问题 ,获得了淀积弱张应力的多晶硅膜的最佳工艺条件 ,研制出多晶硅微机械开关 .初步测试出其开关的开启电压为 89V ,开关速度为 5μs,这为研制用于雷达和通讯的全单片集成的 RF MEMS开关系统打下了基础 .

By using LPCVD SiO 2 and poly silicon as sacrificial layer and cantilever respectively,a poly silicon micromachined RF MEMS(radio frequency microelectronic mechanical system) switch is fabricated.During the fabrication process,the stress of poly silicon is released to prevent poly silicon membrane from bending,and the issue of compatibility between RF switch and IC process technology is also resolved.The low residual tensile stress poly silicon cantilever is obtained by the optimization.The switch is tested,and the preliminary test results show:the pull down voltage is 89V,and the switch speed is about 5μs.The switch provides the potential to build a new fully monolithic integrated RF MEMS for radar and communications applications.