期刊文献+

用于无线通信的SiGe异质结双极型晶体管AB类功率放大器(英文) 被引量:1

SiGe HBT Class AB Power Amplifier for Wireless Communications
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摘要 报道了一种性能良好的 Si Ge功率放大器 ,具有用于无线通信的前景 .在 B类模式下工作时 ,输出功率可以达到 30 d Bm.在 AB类模式下 ,电源电压为 4 V工作时 ,1d B压缩点输出功率 (P1 d B)为 2 4 d Bm,输出功率三阶交截点(TOI)为 39d Bm.最大的功率附加效率 (PAE)和在 1d B压缩点的功率附加效率分别达到 34%和 2 5 % .处理 CDMA信号时的邻道功率抑制超过 4 2 d Bc,符合 IS95标准 . Good performance SiGe power amplifiers applicable to wireless communications are demonstrated.The output power can reach more than 30dBm in class B mode.And in class AB mode,the output power at 1dB compression point ( P 1dB ) is 24dBm,the output third order intercept (TOI) power is 39dBm under V cc of 4V.The highest power added efficiency (PAE) and PAE at 1dB compression point are 34% and 25%,respectively.The adjacent channel power rejection for CDMA signal is more than 42dBc,which complies with IS95 specification.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第9期921-924,共4页 半导体学报(英文版)
基金 国家自然科学基金资助项目 (批准号 :6983 60 2 0 )~~
关键词 无线通信 AB类 锗硅 异质结双极型晶体管 微波功率放大器 SiGe HBT microwave power amplifier
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参考文献6

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同被引文献9

  • 1Robertson I D.RFIC and MMIC design and technology.London,the Institution of Electrical Engineers,2001
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  • 7钱永学,刘训春,王润梅,石瑞英.自对准GaInP/GaAs HBT器件[J].Journal of Semiconductors,2002,23(5):513-516. 被引量:8
  • 8钱永学,刘训春.InGaP/GaAs HBT微波功率放大器的设计[J].Journal of Semiconductors,2003,24(7):753-757. 被引量:3
  • 9白大夫,刘训春,袁志鹏,钱永学.ISM频段中功率功率放大器(英文)[J].Journal of Semiconductors,2004,25(6):626-632. 被引量:1

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