摘要
采用光致发光 (PL )谱和傅里叶变换红外 (FTIR)谱研究了掺铒 a- Si Ox∶ H(a- Si Ox∶ H〈 Er〉)薄膜在不同退火温度下光学性质和微观结构的变化 .PL 谱的测量结果表明 :薄膜在 1.5 4 μm的 Er3+发光和 75 0 nm处的可见发光随退火温度有相同的变化趋势 ,这种变化和薄膜在退火过程中微观结构的变化有着密切关系 .FTIR谱的分析表明 :a- Si Ox∶ H薄膜是一种两相结构 ,富硅相镶嵌在富氧相中 .两者的成分可近似用 a- Si Ox≈ 0 .3∶ H和 a- Si Ox≈ 1 .5∶ H表示 ,前者性质接近于氢化非晶硅 (a- Si∶ H ) ,后者性质接近于 a- Si O2 .富硅相在退火中的变化对 Er3+ 的发光强度有重要影响 .
An investigation on the correlation between Er 3+ emission and the microstructure of erbium implanted hydrogenated amorphous silicon oxide (a SiO x ∶H<Er>) films is presented.FTIR spectra experimental results indicate that the a SiO x ∶H<Er> films are a mixture of two phases,an hydrogenated amorphous SiO x matrix and silicon rich domains embedded therein.The changes in the nonradiative centers in the silicon rich domains have a strong influence on Er 3+ emission.
