摘要
提出一种改进的 DSOI结构 ,在保留 DSOI解决浮体效应和散热问题的基础上 ,能提高电路速度和驱动能力等器件性能 .采用不完全除去沟道下绝缘层的办法 ,使 DSOI器件的结构更接近 SOI.采用准二维器件模拟器MEDICI对结构进行模拟 ,结果证明这种改进后的结构使器件具有更优越的性能 .
A new device structure called DSOI (drain/source on insulator) is proposed to alleviate the thermal transfer problem and floating body effects in SOI (silicon on insulator) device.The purpose of present work is to modify DSOI structure to get the best device electrical capability.Simulation results approve that this modified structure has better electrical performance than prototype.
基金
国家重点基础研究专项经费资助项目~~
