摘要
采用基于测量 S参数和直流参数的工程模型与微波在片测试技术 ,建立与76 mm Ga As工艺线直接结合的Ga As器件 (MESFET,PHEMT)的 MMIC CAD适用器件模型及模型库 ,并通过对不同种类 Ga As MMIC的设计研制进行了验证与改进 ,模拟结果和测试结果基本一致 .目前此模型和模型库已用于76 m m Ga As工艺线上多种微波 Ga As单片的设计研制 .
Based on simulating measured S parameter and DC I V characteristics,the engineering model of GaAs devices(MESFET,PHEMT) is extracted using microwave on wafer testing technology,and a model library based on φ 76mm GaAs process line is established.These models are confirmed by the design and fabricated of several GaAs MMICs.The results of calculation and those of simulation are in good agreement with each other.
