Si^(4+)离子对Y^(3+):PbWO_4晶体闪烁性能及辐照硬度的影响

Influence of Si^(4+) Ion on Scintillation Properties and Radiation Hardness of Y^(3+) Doping PbWO_4 Crystals

Y3+离子掺杂钨酸铅晶体特殊的低剂量率辐照行为一般在晶体顶端表现更为明显,以往研究认为该现象起因于晶体中有效分凝系数<1的Na+、K+和Si4+等杂质在顶端的富集.本文研究了Si4+掺杂的Y3+:PWO晶体,对晶体顶端和晶种端的分段晶体测试了退火温度对晶体透过率和辐照硬度的影响,结果发现:在实验所涉及的掺杂浓度范围内,Si4+离子杂质对Y3+:PWO晶体的辐照硬度及透过率无影响,可以认为Y3+:PWO晶体特殊的低剂量率辐照行为和晶体中的Si4+离子含量无关.

Based on the fact that the exceptional irradiation behaviors are prominent at the top part of Y3+ doping PWO crystals while exposed to low dose rate gamma-ray, previous studies concluded that this phenomenon was caused by enrichment of impurities such as Na+, X+ and Si4+ whose segregation coefficient are smaller than 1. In this paper, the relationships among annealing, optical transmission and radiation hardness of Si4+ ion contained Y3+: PWO crystals were investigated. The experimental results show that the Si4+ ions do not influence optical transmission and radiation hardness of Y3+: PWO crystals at the concentration involved in the study. It can be concluded that the exceptional irradiation behaviors of Y3+: PWO crystals do not relate to the contamination of S4+ ion.