摘要
采用同步辐射白光透射形貌术研究了提拉法生长的高温无机闪烁晶体Ce:YAlO3(简称Ce:YAP)中的缺陷。实验发现在Ce:YAP晶体中存在着生长条纹、包裹沉积物、核心、孪晶及位错簇等缺陷 ,同时对生长缺陷形成的原因进行了讨论。结果表明 ,离子掺杂浓度。
The defects in Ce:YAlO 3 single crystals grown by Czochralski method were investigated by transmission white beam synchrotron radiation topography method. It was shown in experiments that the growth striations, inclusions precipitations, twins, core and dislocation group were the main growth defects in Ce:YAP single crystals. The mechanism of the defects formation was also discussed in the paper. The results showed that the doped concentration, purity of starting materials and growth conditions are the main causes for defects formation in Ce:YAP single crystals.
出处
《核技术》
CAS
CSCD
北大核心
2002年第10期869-872,共4页
Nuclear Techniques
