几种半导体器件的硬X射线剂量增强效应研究

Study of hard X-ray dose enhancement effects for some kinds of semiconductor devices

本文给出了大规模集成电路CMOS4 0 6 9、浮栅ROM器件在北京同步辐射装置 (BSRF)和钴源辐照的X射线剂量增强效应实验结果。通过实验在线测得CMOS4 0 6 9阈值电压漂移随总剂量的变化 ,测得 2 8f 2 5 6、2 9c2 5 6位错误数随总剂量的变化 ,给出相同累积剂量时X光辐照和γ射线辐照的总剂量效应损伤等效关系。

Experimental results of X-ray dose enhancement effects are given for CMOS4069 and floating gate ROMs irradiated in Beijing Synchrotron Radiation Facility and in cobalt source. Shift of threshold voltage vs. total dose for CMOS4069 and the errors vs. total dose for 28f256 and 29c256 have been tested on line and the equivalent relation of total dose damage under the same accumulated dose is provided comparing the response of devices irradiated by X-ray and γ-ray source. These results can be provided for X-ray radiation hardening technology as an effective evaluation data.