摘要
本文研究了高温退火过程对TiSi_2/n^+-POly-Si 复合栅MOS电容电学性能及TiSi_2膜特性的影响.结果表明,当炉退火温度高于900℃时,TiSi_2层厚度变的不均匀,甚至在某些地方不连续;TiSi_2/n^+Poly-Si 界面十分不平整;多晶硅中杂质外扩散十分严重; MOS电容的性能和电学参数变差.对于RTA过程,高温退火对MOS电容的电学特性没有产生不利影响,TiSi_2膜仍很均匀.所以,在 TiSi_2/Poly-Si复合栅结构工艺中,高温退火过程最好采用 RTA技术.
Thermal stability of TiSi_2 on polycrystalline silicon is investigated by cross-sectional tr-ansmission electron microscopy.The results show that when the additional furnace annealingtemperature is higher than 900℃, discontinuity of TiSi_2 film, and a penetration of TiSi_2 intopolycrystalline silicon layer occur,causing a rough TiSi_2/poly-Si interface.The electricalproperty of TiSi_2/poly-Si polycide MOS capacitor is worse than that of poly-Si gate MOS ca-pacitor.While for high temperature RTA process,no unfavorable effects are observed.
