摘要
采用反应离子刻蚀GaAs/GaAlAs双异质结构激光器的一个腔面,已经获得室温下连续激射的效果,其阈电流比解理腔面高18％左右,量子效率低14％左右.
One facet of GaAs/GaAlAs DH laser cavity was formed by using reactive ion etching(RIE) technique.CW lasing was observed in the lasers fabricated by this method. Comparedwith the cleaved cavity lasers, the average threshold current of RIE facet lasers has inceased byabout 18%, and the average external differentialquantum efficiency decreased by about 14%.
