InAs自组织量子点(线)的制备和表征

FABRICATION AND CHARACTERIZATION OF InAs SELF-ORGANIZED QUANTUM DOTS (WIRES)

在InP（001）基衬底上用分子束外延方法生长了InAs纳米结构材料,通过改变生长方式,得到了InAs量子点和量子线.根据扫描电镜和透射电镜观测结果的分析,认为衬底旋转时浸润层三角形状的台阶为InAs量子线的成核提供了优先条件,停止衬底旋转时InAlAs缓冲层沿[110]方向分布的台阶促使InAs优先形成量子点.讨论了量子点和量子线的形成机理.

The InAs nano-structure material was grown on InP(001) substrate with molecular beam epitaxy. By using different growing condition of InAs epitaxial layer, InAs quantum dots and quantum nano-wires were obtained. The analysis of the images of scan electron microscope (SEM) and transmission electron microscope (TEM) indicates that the wetting layer's triangular step way provide the preferential nucleation condition for the InAs quantum dots (QDs) when revolving substrate, while the InAs nano-wires are prone to growing at the distributed steps along the [110] orientation of buffer layer when stopping the revolution of substrate. The growth mechanism of InAs quantum dots and wires is discussed in detail.