摘要
提出制做纳米点阵的一种新方法。用波长为 4 2 5 .5 nm的光梯度场操纵铬原子可制做出阵列密度达 2 .2 1× 10 7per/ mm2、理论半高宽度 (FWH M)可达 10 nm的纳米点阵。介绍用光梯度场操纵原子制做纳米点阵的原理 ,对原子束的准直进行分析 ,给出原子束在激光梯度场中聚焦的经典模型和量子模型并进行数值模拟。用光操纵原子制做纳米点阵使器件的阵列密度和尖端曲率得到大幅度提高 ,该器件作为发射极可以降低工作电压和提高发射电流。
A new method to fabricate nanometer lattice is presented. Based on this method, nanometer lattice can be fabricated by using light gradient field whose wavelength is 425.5 nm to manipulate chromium atoms, and the array density of such device is 2.21×107 per/mm2, the theoretical FWHM of line width can be 10 nm. The principle of fabricating nanometer lattice by the manipulation of atoms with gradient light field is presented, and collimation of atomic beam is analyzed. The classical model and quantum model to describe focusing characteristics of atomic beam in light field and numerical simulations are given. Nanometer lattice, whose array density and curvature can be increased, fabricated by using light gradient field to control atoms, and the goal of reducing operating voltage and increasing emitting current will be reached if such device is used as emitter.
出处
《光电子.激光》
EI
CAS
CSCD
北大核心
2002年第10期1040-1043,共4页
Journal of Optoelectronics·Laser
基金
中国科学院知识创新工程项目基金资助项目 (A2 K0 0 0 9)
微细加工光学技术国家重点实验室基金资助项目