ZnO:Al(ZAO)透明导电薄膜的制备及其特性

Preparation and Properties Research of Transparent Conductive ZnO:Al(ZAO)Thin Films

笔者采用射频磁控溅射工艺、以氧化锌铝陶瓷靶为靶材制备透明导电ZAO薄膜,系统研究了各工艺参数,如氧流量、工作气压、温度、射频功率和退火条件等对其结构和光电特性的影响。实验结果表明:在纯氩气中且衬底温度为300℃时制备的ZAO薄膜经热处理后电阻率降至8.7104 W·cm,可见光透过率在85%以上。X射线衍射谱表明ZAO晶粒具有六角纤锌矿结构且呈c轴择优取向,晶粒垂直于衬底方向柱状生长。

Using ZnO mixed with Al2O3 (3wt%) as target, ZAO thin film were deposited on glass substrate by RF magnetron sputtering. The effect of oxygen flow mass,argon pressure,substrate temperature,RF power and annealing treatment on the structural,electrical and optical properties of ZAO film were investigated.The post-annealed ZAO film prepared in pure argon with the substrate at 300℃. The obtained film exhibits optimal optical and electrical properties: visible transmittance of above 85% and minimum specific resistance of 8.7×10-4 Wcm. The X-ray diffractometer measurement reveals that ZAO film is polycrystalline with the hexagonal crystal structure and has a strongly preferred orientation of c axis perpendicular to the substrate surface.