Ge_xSi_(1-x)/Si超晶格的俄歇深度剖面分析

AUGER DEPTH PROFILE ANALYSIS OF Ge_xSi_(1-x)/Si SUPERLATTICE

用氩离子刻蚀和俄歇电子能谱测量Ge_xSi_(1-x)/Si应变层超晶格的成分深度分布,得到Ge,Si两种成分随深度的周期性变化,在二次电子象中观察到刻蚀坑边缘的明暗交替的周期性结构。讨论了用俄歇深度剖面分布作超晶格结构分析的特点及其局限性。

The compositional depth profile of Ge_x Si1-x/Si strained layer superlattice has been obtained by AES combined with argon ion sputtering, which indicates the concentrations of Ge and Si vary with depth periodically. The secondary electron image shows some periodic pattern consisting of alternate bright and dark bands around the center of the sputtered crater. The characteristics of Auger depth profile as a method for superlattice structure analysis, as well as its limitations, are discussed.