摘要
研究了含 N MOS薄栅介质膜的击穿电场和电荷击穿特性。结果表明 :MOS栅介质中引入一定的 N后 ,能提高介质的电荷击穿强度 ,电荷击穿强度受 N2 O退火温度的制约 ;N对薄栅介质的击穿电场强度影响甚微 ,击穿电场受栅偏压极性的制约。
Breakdown field and charge breakdown characteristics in thin nitrided MOS dielectrics have been investigated. The experimental data have shown that charge breakdown strength increased by introducing nitride into gate oxides and by raising N 2O annealing temperature. Breakdown field in thin nitrided films is only improved little and depends on the bias polarity.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2002年第3期321-322,338,共3页
Research & Progress of SSE
