半导体金属氧化物的室温固相合成及其气敏特性研究

Preparation and Gas Sensitivity of Semiconductor Oxides bySolid-state Reaction at Room Temperature

以无机盐为原料,在遵守热力学及动力学限制的前提下,对一定摩尔比的反应物进行研磨,使其发生室温固相化学反应而合成了SnO2,In2O3,ZnO,Fe2O3等半导体金属氧化物的纳米粉体;用XRD,TEM测试手段对产物的物相和微观结构进行了表征和分析。结果表明,固相化学反应完全,所得产物为理论产物,且平均粒径小于100nm。气敏性能研究结果表明,用该法制备的SnO2,In2O3元件对酒精、LPG气体有一定的灵敏度和选择性,而ZnO,Fe2O3气敏性能却较差。

N-type semiconducting nanometer oxides including SnO2, In2O3, ZnO, and Fe2O3 were prepared by solid state reaction with inorganic compounds at room temperature. The phase composition and microstructure of the powders were studied by XRD and TEM. The results show that the complete solid state reaction was achievable at room temperature. The mean particle size of powder is below 100 nm. The gas sensing characteristics of the pure powders were studied. The results show that sensors made from SnO2, In2O3 have a high sensitivity and selectivity to LPG and ethanol, while the sensors made from ZnO, Fe2O3 have relatively poor sensitivity.