P^+-n^+隧道结的比接触电阻

The Specific Contact Resistance of p^+-n^+ Tunneling Junctions

本文根据Kane的直接隧穿理论,结合欧姆接触的特点,导出了p^+-n^+隧道结比接触电阻的计算公式.此式适用于直接能隙半导体,也适用于Si.在N_D+5×10^(20)cm^(-3)的磷浓度下,对一系列N_A值,按此式计算了Al/n^+-Si的比接触电阻R_(co)结果与Finetti等的测量值在数量级上完全一致.证明AL/n^+-Si的R_c基本上由其中的p^+-n^+结决定,因而与合金工艺有密切关系.

A formula calculating the specific contact resistance of p+-n+ tunneling junction is derived in this paper based on Kane's direct tunneling theory and the characters of an ohmic contact. The formula is applied to silicon as well as direct-gap semiconductors. The specific contact resistance Rc of Al/n+ -Si contacts is calculated for a given ND ( 5 × 1020 cm-3) and a series of NA by use of the formula. The results are of the same order of magnitude compared with the experimental values measured by Finetti et al. It Is shown that the specific resistance of Al/n+-Si contact is determined by the p+-n+ junction, indicating its strong dependence on the metallization process.