GaAs的B^+注入隔离

Isolation in GaAs by B^+ Implantation

本文报告了在注Si^+的GaAs有源层上进行B^+注入实现隔离的实验研究.结果表明,低剂量和高剂量的B^+注入都能形成高阻区,但低剂量注入形成的高阻区具有更好的隔离特性.本文还讨论了B^+注入n型GaAs消除载流子的补偿机理.

In this paper, we reported the results of isolation in Si-implanted GaAs active layer by B+ implantation. It was show that both higher and lower doses B+ implantation can produce high resistancs region, but lower one leads to a better isolation properties. The compensation mechanlsm associated with the removal of carriers in n-GaAs by B+ implantation are also discusscd.