摘要
本文主要从事GaAs自对准高温栅全离子注入技术(SAG)的研究,并以此工艺为基础,制作了WSi_xN_y/GaAs SBD,栅长分别是0.8μm和0.5μm的MESFET和GaAs.高速运算放大器差分输入电路.其中制造的耗尽型MESFET,栅长0.8μm,栅宽25μm,夹断电压V_P=-2.5V,跨导gm达170mS/mm栅宽,饱和压降V_(dss)仅0.7V,漏源击穿电压BV_(dx)达6V.制造的GaAs运放差分输入电路,最大直流增益30dB,在1GHz下仍有29dB的增益,平均直流增益22dB,输入失偏较小,电源8～12V可调,其性能达国外1985年实验室研制水平.在电路设计中,采用SPICE3a7程序,成功地进行了GaAs差分输入电路模拟和设计.
In this thesis, full ion-implated refractory self-aligned gate(SAG) GaAs planar IC technology was studied in detail. The GaAs D-mode MESFETs and the operational amplifier differential input circuits have been successfully fabricated with excellent performances, good uniformity and high yield. The typical features of fabricated GaAs SAG MESFETs arc as follows: minimum gate length L8=0.5μm,gm= 170mS/mm, Vp=-2.5V. A high speed operational amplifier differential circuit was designed and fabricated by SAG technology with agreement between simulated and measured data. It demostrated maximum DC gain 30dB, average DC gain 22dB, and maximum gain 29dB at 1GHz.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1991年第2期89-94,共6页
Research & Progress of SSE
基金
国家自然科学基金重大项目
