摘要
本文用反应溅射方法,制备了WN_x薄膜,用X光衍射、俄歇能谱深度成分分析、表面电阻测量及电流—电压曲线,测量、研究了WN_x薄膜的性能及与GaAs的肖特基势垒特性.
In this paper, WNx thin film was formed by reactive RF sputtering. The characterization of WNx thin film and Schottky Barrier contacts to GaAs were studied by using XRD, AES, electric resistivity and I-V mpasurements.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1991年第2期95-99,共5页
Research & Progress of SSE
基金
国家自然科学基金重大项目
