Si,S,Be,Mg离子注入GaAs白光快速退火特性研究

The Characteristics of Rapid Thermal Annealing of Si^+ , S^+ and Be^+, Mg^+ Implanted GaAs

利用灯光瞬态退火处理Si,S离子注入SI-GaAs样品,在950℃5秒的条件下得到了最佳的电特性,Be,Mg离子注入SI-GaAs样品在800℃ 5秒退火得到了最佳的电特性.Si,S,Be注入GaAs样品在适当的条件下得到了陡峭的载流子剖面分布,而Mg注入的样品有Mg的外扩散和较大的尾部扩散.透射电镜测量表明,Si低剂量和Be大剂量注入退火后单晶恢复良好,而Si和Mg大剂量注入退火后产生了大量的二次缺陷.应用Si和Mg注入GaAs分别制作了性能良好的MESFET和β=1000的GaAIAs/GaA,双极型晶体管(HBT).

The electrical characteristics were measured for 29Si+, 34S+ and Be+, Mg+ implanted GaAs after light rapid thermal annealing(RTA). Optimal conditions of 5o at 950℃ for Si+,S+ and 5o at 800℃ for Be+,Mg+ have been obtained respectively. The carrier concentration profiles of implanted 29Si+, 34S+ and Be+ were abrupt for optimal annealing conditions, but the profiles of impanted Mg+ produced rapid diffusion tail. High quality MESFET with full ion implantation and GaAlAs/GaAs HBT were fabricated using Si+ and Mg+ implanted GaAs.