非晶硅钝化膜的热稳定性及其在可控硅元件上的应用

The Thermal Stabilities of α-Si:H Passivation Film and Its Application to Thyristor Elements

实验报导了α-Si:H薄膜作为优质的硅器件钝化保护膜在可控硅元件上的应用.指出,它能大幅度提高元件的正反向击穿电压,改善温度特性,具有明显的经济效益.还指出,α-Si:H钝化膜能吸取c-Si界面上的杂质进一步促使硅器件的优化.本文还讨论了提高α-Si:H钝化保护膜热稳定性的途径.

We have reproted the unique a-Si:H film for c-Si devices passivatioa used on the thyristor elements. It was shown that the a-Si:H passivation film can Increase the forward and reverse breakdown voltage over a wide range and improve the high temperature feature for thyristors, which has apparently economic benefit.The a-Si:H passivation film has a novel ability to draw the impurities from the interface of c-Si devices. So, it may promote the c-Si devicec having a higher quality.Finally the thermal stabilities of a-Si:H passivated film are also discussed.