摘要
本文介绍了C波段GaAs微波单片集成低噪声放大器的设计,给出了电路拓扑与版图设计.在3.7～4.2GHz下,研制成的两级放大器噪声系数为1～3.5dB,增益为20dB左右;三级放大器噪声系数为1.6～3.5dB,增益大于30dB.
This paper introduces the design of C band GaAs MMIC low noise amplifier. Based on the design the circuit topology and layout are given. The two- and three- tage amplifiers have a noise figure of 1-3.5dB and 1.6-3.5dB with a gain of more than 20dB and 30dB at 3.7-4.2GHz, respectively.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1991年第3期181-187,共7页
Research & Progress of SSE
