摘要
本文报导0.6～5MeV高能Si^+离子注入LEC半绝缘GaAs的快速退火效果,在950℃温度下退火5秒得到最佳电特性.采用多能量叠加注入已制备出平均深度在1.2μm,厚约1.7μm的n^+深埋层,载流子浓度为3～5×10^(17)cm^(-3).在近表面单晶层上作成了性能良好的肖特基接触,其势垒高度约为0.7V.
Optimum activation can be achieved when LEC SI-GaAs wafers are annealed at 950℃ for 5s after 0.6 -5.0MeV Si ion implantation. A buried n+ region has been created by multiple energy MeV implants at the depth of 1.2μm below surface, the thickness and carrier concentration are 1.7μm and 3-5 × 1017cm-3, respectively. On the near surface monocrystalline GaAs layer, a better Schottky contact with a barrier height of 0.7V has also been fabricated.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1991年第3期245-249,共5页
Research & Progress of SSE
基金
国家自然科学基金资助项目
