摘要
本文应用MOCVD技术制备出高质量的GaAs,AlGaAs外延材料以及GaAs/AlGaAs异质结和多量子阱结构.首次成功地用该技术生长了微波HBT全结构材料,并获得了较高性能的器件结果:300K时直流增益(β)为15～40,77K时为60,截止频率大于10GHz,最高振荡频率为5.5GHz.
High quality GaAs and AlGaAs epilayers have been grown by MOCVD. The preparation of GaAs/AlGaAs heterostructures and MQWs were studied. The HBTs fabricated with GaAs/ AlGaAs epilayers have achieved 15-40 currant gains at 300K, and about 60 at 77K, 10GHz cut-off frequency and 5.5GHz maximum oscillation frequency for microwave application.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1991年第3期230-234,共5页
Research & Progress of SSE
基金
国家自然科学基金项目
