InGaAsP/InP异质结界面态的变频C-V研究

Study of Variable-Frequency C-V on InGaAsP/lnP Heterojunction Interface States

本文利用自建的变频C-V测试系统测量分析了InGaAsP/InP异质结的界面态,结出其界面态密度和时间常数.实验结果表明,在界面同时存在快、慢界面态,其参数分别为快界面态:N_(s1)=7.3×10^(11)eV^(-1)·cm^(-2),τ_1=2.2×10^(-5)s慢界面态:N_(s2)=2.5×10~12eV^(-1)·cm^(-2),τ_Q=1.5×10^(-2)

Using variable-frequency C-V measuring system we measured and analysed the interface state characteristics of InGaAsP/InP heterojunction and obtained the interface state density and time constant. The experimental results show that both fast and slow interface states exist at the interface. fast interface states: Ns1 = 7.3×1011eV-1.cm-3, τ1= 2.2×10-5s slow interface states: Ns2 = 2.5×1012eV-1.cm-2,τ2 = 1.5×10-2s