非晶硅场效应晶体管静态特性的非模型分析

The Non-model Analysis on the Static Characteristic of α-Si FET

本文介绍一种分析非晶硅场效应晶体管静态特性的非模型方法.它与传统的模型分析方法不同.不要求知道非晶硅隙态密度分布g(E)的具体形式,而只需假定g(E)是连续函数.据此可得到该器件的I-V特性方程.它是一个无穷级数,但就实际应用精度而言,它可用一个多项式近似表示,而且它的第一项是与单晶硅MOSFET的I—V特性方程(非饱和区)相似.这个方程特别适合于描写双极性非晶硅场效应晶体管的静态特性.

In this paper we shall present a non-model method on analyzing the static characteristic of a-Si FET. As contrasted to the conventional model method, the non-model method only needs to assume the gap state density distribution g(E) of a-Si to be a continuous function without knowing its exact shape. On the basis of this assumption, we obtain aa equation on the I-V characteristic of a-Si FET,which is an infinite series. For the practical accuracy, the equation can be expressed by a polynomial and its first term is similar to the characteristic equation (non-saturation zone) of c-Si MOSFET. This equation is specially suitable to analyze the a-Si BFET's static Characteristic.