摘要
本文在Warner-Grung的高低结理论基础上修正了势垒高度和结中最大电场,获得计算高低结比电阻的一个修正公式.修正的幅度在一个数量级左右.
An improved expression for the specific contact resistance of high-low junctions is gained in this paper by modifying the barrier height and the maximum field in the junction on the basis of warner-grung's theory. The correctness factor is about ten.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1991年第4期353-356,共4页
Research & Progress of SSE