α-Si-H TFT及有源矩阵选址平板液晶显示

α-Si:H TFT and Active Matrix Liquid Crystal Display

本文报道了用于平板液晶显示(LCD)的氢化非晶硅薄膜晶体管(α-Si:H TFT)的研制结果,此晶体管开态电流约10^(-6)A,关态电流<10^(-11)A,开启电压～15V.用此α-Si:H TFT矩阵已封装出具有20×20个有效象素单元的液晶显示平板,并成功地实现了有源选址与动态显示功能.同时,对如何进一步提高TFT性能作了一些分析与讨论.

We report the fabrication of hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) by standard silicon planar techniques. The DC characteristics of top-gate structure of a-Si:H TFT have been investigated and the typical parameters are Ion-10-6 A, Ioff<10-11 A, Vth-15V. The LCD panel with 400 pixels using these a-Si:H TFTs as the active matrix elements has been made and the dynamic displaying function has been successfully fulfilled. Some techniques to improve the performance of TFT are also discussed.