摘要
本文从硒化镉视象管的靶材料、结构和工作原理及其管型演变过程,分析了硒化镉管中惰性产生的原因,提出了降低硒化镉管和硒碲镉管惰性的方法,可供硒碲镉靶摄象管的研制者参考。
Based on the target materials, the structure and the operational principles of targets in the chalnicon and the chalnicon evolution process, the origin of the lags are analyzed in the paper. The methods for decreasing the lags are proposed for developing the Vidicons with CdSe or GdTe_(1-x)Se_x target.
出处
《光电子技术》
CAS
1991年第2期32-38,共7页
Optoelectronic Technology