摘要
本文详细分析液晶薄膜晶体管(TFT)有源矩阵单元性能.其中包括薄膜晶体管单元结构特性和液晶单元电容充放电物理过程。通过分析,推导出有用的计算公式。这些结果对实际工作具有指导作用。
In this paper, the characteristics of thin film transistor(TFT) active matrix for liquid crystal displays, including the characteristics of TFT cell structure and the charging and discharging process of liquid crystal cell capacitance, are analysed. Some useful formulas arc deduced as well.
出处
《光电子技术》
CAS
1991年第3期20-25,共6页
Optoelectronic Technology
关键词
液晶显示
薄膜晶体管
有源矩阵
thin film transistor, liquid crystal displays, active matrix
