Ta_2O_5/SiO_2复合介质TFEL显示

TFEL Display with Composite Dielectric Layer of Ta_2O_5/SiO_2

采用Ta_2O_5/SiO_2复合介质结构研究了ITO/复合介质/Al电容器和ZnS:Mn TFEL器件。用射频磁控溅射制备的复合介质膜,有效地解决了Ta_2O_5与ITO起反应以及Ta_2O_5薄膜的漫延性击穿问题。I—V、Q—V、B—V特性的测量结果以及加速老化实验表明,采用Ta_2O_5/SiO_2复合介质制作的TFEL器件,具有较高的稳定性和可靠性。

Investigation on ACTFEL with Ta_2O_5/SiO_2 as composite dielectric layers is reported. Ta_2O_5 and SiO_2 films were deposited by rf magnetron sputtering. By use of SiO_2 as the interface layers to ITO and ZnS, the reactions between Ta_2O_5 and ITO, Ta_2O_5 and ZnS were avoided. Composite dielectric layer of Ta_2O_5/SiO_2 shows self-healing breakdown. I—V and Q—V measurements for the composite dielectric layer indicate that the breakdown field strength is as high as 5×10~6V/cm and the charge density before breakdown is 5μC/cm^2. Accelerating lifetime test of EL samples was performed in the season with high humidity. Test results show that TFEL with composite dielectric layer of Ta_2O_5/SiO_2 has good stability and reliability.