绝缘栅场效应管工作原理的统一表述

Unified Description About Working Principle of Insulated Gate Field-Effect Transistor

关于绝缘栅场效应管的工作原理,现行教材有几种不同的讲解,观点各不相同。结构示意图和特性曲线画法不同。但是,对同一类的场效应管而言,结构示意图和特性曲线只能有一种表述形式是正确的。从场效应管的基本结构出发,用新观点、新方法说明其基本工作原理,击穿的位置,击穿的原因。提出工作原理结构示意图的统一表述方法应当是在源衬、漏衬PN结之间是正负离子对应的耗尽层,在反型层与衬底之间是单一离子层(它不应该与耗尽层混同)。漏极特性曲线的统一表述规律是截止状态时的漏源击穿电压|BV′_DS|是各个不同V_GS时,击穿电压的最大值。

Concerning working principle of insulated gate field-effect transistor (IGFET) , in the existing and using textbooks, there are several different explanations that are unlike in their opinions each other. In these textbooks, different sketch maps of structure about IGFET and characteristic curves have been given. But, for the same type of field-effect transistor, there must be only one expressing or description form to be correct. Based on the basic structure of IGFET, the authors use new standpoints and methods to analyze the working principle, the breakdown position and the breakdown reason of the transistor. The authors present that the Unified description method about sketch maps of structure of the transistor of the working principle should be that there is positive or negative carriers corresponding depletion layer between PN junctions of source-substrate and drain-substrate. And, between reversion layer and substrate there is unitary ions layer (it should not be confused with depletion layer) in which ions is in the crystal lattice (that is to say, the ions is not able to move); Unified description rule of characteristic curves of drain is that drain-source breakdown voltage of 'off' state | BV'DS | is maximum of breakdown voltage when VGS is different each other.