离子束蚀刻硅片沟槽台阶形貌研究

The study of step topography of grooves on silicon wafer durino ion beam etchino

1 离子束蚀刻实验 1.1 样品制备取机械抛光的N型单晶硅片(1,1,1)作蚀刻样品,均匀涂上厚度为1μm的OMR-83光刻胶,利用集成电路制版技术,用曝光方法将光刻胶刻出宽度分别为15μm,10μm,5μm,长为2mm的长槽。

Using 600eV Ar^+ ions with a current density 0.5ma/cm^2 at normal incidence etch various width grooves (15μm, 10μm, 5μm)on the semiconductor single crystal silicon wafer. It is observed that the dig ont is presented on the floor of grooves nearly sides. A theory model of the reflection of incident ion beam from adjacent steep side is constructed. The experimental results are compared with comnuter simulation.