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Dislocation Mechanism of Diamond Crystal Growth from Fe-Ni-C System at High Temperature-High Pressure

Dislocation Mechanism of Diamond Crystal Growth from Fe-Ni-C System at High Temperature-High Pressure
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摘要 Some dislocations, which are generated in the diamond single crystal during the diamond crystal growth from Fe-Ni-C system, may affect diamond crystal growth mode at high temperature-high pressure (HPHT). The concentric dislocation loops were successfully examined by Moire images. The surface morphologies of growing and as-grown diamond single crystals were observed by scanning electron microscopy (SEM). The concentric dislocation loops formation process and their effect on the diamond crystal growth mode were analyzed. It should be noted that whatever the nature of the dislocation is, should the Burgers vector of dislocation has a component at the direction normal to the growth interface, the dislocation will make the face parallel to the growth interface grow into spiral face. The presence of consecutive spiral steps on the diamond crystal surface also provides a direct evidence of the dislocation mechanism of diamond crystal growth.
出处 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2002年第1期66-68,共3页 材料科学技术(英文版)
基金 Thi work was supported by the Nstional Natural ScienceFoundation of China (Grant. No 593T1027).
关键词 High temperature-high pressure DIAMOND Crystal growth Fe-Ni-C system High temperature-high pressure, Diamond, Crystal growth, Fe-Ni-C system
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参考文献6

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