摘要
In the present study, a modified Hall-Petch correlation on the basis of dislocation pile-up model was used to estimate the yield strength of SiCp/AI composites. The experimental results show that the modified Hall-Petch correlation expressed as σcy=244+371λ-1/2 fits very well with the experimental data, which indicated that the strength increase of SiCp/AI composites might be due to the direct blocking of dislocation motion by the particulate-matrix interface, namely, the dislocation pile-up is the most possible strengthening mechanism for SiCp/AI composites.
