摘要
本文介绍已研制成功的一种新型结构的水平沟道场控晶闸管(简称LFCT),它具有制作工艺简单、阻断增益高、开关速度快、与集成电路工艺兼容等优点。迄今为止在国内外未见有类似结构的报导。
A new structure of field-controlled thyristor with lateral channel has been developed successfully. This device is possessed of some advantages, such as manufacture simplicity, high blocking-gain , fast switching speed and compatibility with IC in monolithic mode. The reports about this new structure have not been found in the world until now.
基金
国家自然科学基金资助课题
关键词
水平沟道
场控
晶闸管
lateral channel, field-controlled, thyristor
