非晶锗薄膜退火晶化的拉曼散射研究

INVESTIGATION ON ANNEALING CRYSTALLIZATION OF AMORPHOUS GERMANIUM FILMS BY RAMAN SCATTERING

利用拉曼散射研究非晶锗薄膜进行不同温度、不同时间退火热处理后晶化的实验,结果表明:退火温度直至440℃,退火时间长达90分钟,薄膜样品仍为非晶态;退火温度高于480℃,退火时间只30分钟,薄膜样品巳转变为晶态;而退火温度在450℃—470℃,退火时间30分钟,薄膜样品中晶态和非晶态并存。通过比较、分析各种情况,得出450℃是非晶锗薄膜的晶化温度,与文献上报导用其他方法测量的结果相一致。

In this paper, annealing crystallization of amorphous germanium films under different annealing temperature and different annealing time is investigated by Raman scattering. The experimental results showed that, with annealing temperature up to 440℃ and annealing time as long as 90 minutes, the film specimen is still in amorphous state; that from temperature of 480℃ and abov and annealing time of only 30 minutes, the film specimen has transformed into crystalline state; and that amorphous state and crystalline state coexist in the film specimen under annealing temperature of 450℃-470℃ and annealing time of 30 minutes. By comparing and analysing these facts, it is concluded that the crystallization temperature of amorphous germanium films is 450℃ which is in agreement with measurements by other methods reported in literature.