MNOS结构保留特性的研究

STUDY ON THE RETENTION CHARACTERISTICS OF MNOS STRUCTURES

通过浅在储陷阱的电荷泄漏模型,对MNOS结构的保留特性进行研究。根据模型推导出的理论公式满意地描述了包括温度效应和栅压效应在内的实验结果,并得出所研制MNOS结构中存储电荷的保留时间t_r和存储陷阱的分布参数No、E_t和d分别为4.0×10~3min、1.85×10^(18)cm^(-3)、1.04eV和50(?)。

In this paper, charge retention characteristics of MNOS memory structures is investigated by a discharge model of the shallower trap. The formula of retention characteristics based on this model is in good agreement with experimental results, including the effects of temperature and gate voltage. The charge retention time t_r, and the memory trap distribution parameters N_o. E_(?) and d, have been found to be 4.0×10~3min, 1.85×10^(18)cm^(-3), 1.04eV and 50 A, respectively, in our fabricated sample.