摘要
用分子束外延在有刻槽的{001}硅衬底上生长了 GaAs/Al_(0.3)Ga_(0.7)As超晶格材料,利用横断面透射电子显微术对非平而异质结的生长行为和微观结构进行了观察.研究结果表明硅衬底上刻槽的几何形状对外延层的微缺陷特性及生长行为有一定影响,和Si{001}晶面相比,Si{113}可能是一个有利于生长半导体异质结的晶面.
Microstructures and growth behavior of GaAs/AlGaAs superlattices grown by molecularbeam epitaxy on Si(001) patterned substrates are examined by cross-sectional transmission elec-tron microscopy studies.It is found that geometrical profile of channels etched has an influenceon characteristics of microdefects and growth behavior of epitaxy layers.Compared withSi{001} crystal planes, Si{113} may be promising for the semiconductor heterojunction epi-taxy.
