摘要
介绍了利用激光直写光刻技术在 2 0 0mm× 2 0 0mm基片上制作线宽为 5 μm ,周期为35 0 μm的红外透明导电金属网栅的工艺过程 ,对激光直写光刻技术和机械刻划掩模接触光刻制作金属网栅结构的两种方法进行了比较 。
A film taped metallic mesh with linewidth 5μm and period 350μm,which is transparent for infrared and shielding electromagnetic wave,is made on the 200mm×200mm IR substrate by using the laser direct writing (LDW) photolithography and coating technology.The characteristics of the mesh structure made by LDW technique are compared with that by the contact photolithography through the mask made by the mechanical cutting method.The advantages in fabricating the mesh film by LDW are presented.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2002年第10期1270-1272,共3页
Acta Photonica Sinica
基金
应用光学国家重点实验室基金
青年创新基金资助项目