摘要
报道了用 1 0 64nm激光脉冲触发电极间隙为 8mm的半绝缘GaAs光电导开关的实验结果 在触发光能为 1 .9mJ ,偏置电压分别为 3kV和 5kV条件下 ,光电导开关分别工作于线性和非线性模式 ,结果表明半绝缘GaAs光电导开关可以吸收 1 0 64nm波长的激光脉冲 讨论了半绝缘GaAs材料对 1 0 64nm激光脉冲的非本征吸收机制 ,指出GaAs材料禁带内的EL2深能级和双光子吸收对半绝缘GaAs吸收 1 0
The experiments of semi insulating GaAs photoconductive switch being triggered by 1064nm Laser pulse, which is out of the intrinsic absorbing range of GaAs material are reported. The semi insulating GaAs photoconductive switch can operate in the linear model and nonlinear mode respectively , when they switched at 3kV and 5kV and triggered by 1.9mJ laser pulse. The experiments show the semi insulating GaAs photoconductive can absorb 1064nm laser obviously. This non intrinsic absorption mechanism is discussed in the paper. The EL2 deep level defects and double photon absorption in GaAs play a key part in absorption process.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2002年第9期1081-1085,共5页
Acta Photonica Sinica
基金
国家自然科学基金资助项目 (No.5 0 0 770 1 7)
