摘要
以镀制半导体薄膜、巨磁薄膜、金刚石及其它薄膜 ,外延生长及后续的光刻 ,激光与物质的相互作用、等离子体研究为目的 ,设计、研制了脉冲放电激励的XeCl激基激光器 试验结果表明 :激光脉宽 1 8ns,单脉冲能量 1 5 0mJ ,矩形光斑大小 2cm× 1cm ,束散角 3mrad ,最高重复频率 5HZ 与同类激光器相比 ,具有结构简单、造价低廉。
A new XeCl excimer laser is designed for depositing film in order to apply in the interaction between laser and material, material plasma study, and to prepare semiconductor film, CMR film, quartz film and other kinds of film .The parameters of the excimer laser are also measured and analyzed. The wavelength is 308nm,The pulse duration time is 18ns, the pulse energy is 150mJ, the beam divergence angle is 3mrad, and maximal repetition fequency is 5Hz. In the paper, not only the characters of Excimer Laser and design of Excimer Laser are discussed,but also electrode calculation, reducing circuit inductance,study of spark gap,ns discharge,UV preionization,and glow discharge are finished. A new Excimer Laser are got, which has high energy,simple structure, high pump intensity, and large activate volume.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2002年第9期1097-1100,共4页
Acta Photonica Sinica
基金
陕西省自然基金 (2 0 0 1C2 1 )资助项目
