不同CO_2流量对CVD金刚石膜生长的影响研究

THE INFLUENCE OF DIFFERENT CO_2 FLOW RATE ON GROWTH OF CVD DIAMOND FILM

采用微波等离子体化学气相沉积法，以CH4-CO2为气源，通过改变CO2的流量，探讨了此气源下金刚石膜的生长情况。利用扫描电子显微镜对制备的金刚石膜表面形貌和断面进行了表征，采用Raman和X射线衍射仪对金刚石膜的质量和晶体结构进行分析。结果表明，CH4流量为50mL/min时，CO2流量在20～40mL/min范围内可以沉积出完整的金刚石膜，CO2的流量对金刚石膜的表面形貌影响较大，在CO2/CH4=30∶50条件下，沉积速率可达到3.4μm/h，同时可以制备出高质量的金刚石膜。

Diamond films were deposited by microwave plasma chemistry vapor deposition method using CO2/CH4 gas mixtures without supplying additional hydrogen gas. In order to explore the best growth conditions of diamond film,We have a study about the effects of different CO2 flow on the growth of the diamond films. The surface morphologies and cross-section view were characterized by scanning electron microscopy. The qualities and crystal structure were analyzed by Raman spectroscopy and X-ray diffraction. The results show that the diamond films can be obtained within a certain range of CO2 flow rate,which had great influence on the surface morphology,with the CH4was 50 mL/min. The high quality and orientation of the diamond film was deposited under the condition of CO2/CH4 = 30∶50,with the growth rate reach 3.4 μm/h.