钴源对双极性晶体管辐照损伤的参数化分析

Parametric Analysis on Irradiation Damage on Bipolar Transistors from Co Source

采用Co-60辐照源对2N2222A、3CK3636、3DG3501型双极晶体管进行了辐照试验。针对不同温度和剂量率研究了钴源对双极晶体管的辐照损伤影响。试验结果表明:相同辐射吸收剂量下,低剂量率的辐照损伤程度反而更大;随着辐照温度升高,双极晶体管的辐照损伤增强,但温度达到一定值后会出现退火现象,可认为氧化物陷阱电荷及界面态陷阱的增加与退火效应构成了彼此竞争的关系。提出、揭示了双极晶体管辐照损伤机理,为优化其抗辐照性能提供了科学依据。

Co-60radiation source is used to carry out irradiation tests on bipolar transistors of type2N2222A,3CK3636and3DG3501.The effects of irradiation damage on these bipolar transistors from Cosource with various temperatures and dose rates are investigated.These tests show that,under the sameirradiation absorption rate,the irradiation damage from low dose rate is bigger,which is contradiction tocommon knowledge;as irradiation temperature increases,the radiation damage on bipolar transistors isfirst enhanced,and then suffers annealing effect when reaching a temperature of certain value,which canbe treated as a relationship of competition between increase of oxide trapped charge and interface statetrap and annealing effect.Above lays a foundation for revealing the mechanism of irradiation damage onbipolar transistors,while provides a necessary basis for optimizing their anti-irradiation performances.