宇航用双极器件和光电耦合器位移损伤试验研究

Experimental study on displacement damage of aerospace bipolar and optocoupler devices

文章针对器件的位移损伤效应,利用质子加速器产生的质子及反应堆中子对化合物器件和硅器件位移损伤进行试验研究,得到了GaAs光电耦合器的电流传输比(CTR)和硅晶体管电流增益hFE的退化率随等效剂量的变化规律。研究结果表明,在质子70 MeV以上高能量范围,对于硅器件适用的位移损伤等效原理对于GaAs化合物器件则不再适用,需要修正。根据试验数据,给出了经验的修正系数。

To study the displacement damage effects,the proton accelerator and the neutron nuclear reactorare used to determine the displacement damage of compound semiconductor devices and silicon devices used forspacecraft.The curves of the degradation vs.the equivalent dose of the CTE of the GaAs optocpupler and thecurrent amplification(hFE)of the silicon transistors are obtained.By analyzing the radiation test data for theoptocoupler and the bipolar transistor,it is concluded that the displacement damage equivalence for the silicondevices is no longer valid for the GaAs compound devices,thus a correction is needed.Empirical correctioncoefficients are then determined according to the test data.